| PART |
Description |
Maker |
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH50N90B2 IXGT50N90B2 |
HiPerFAST IGBT B2-Class High Speed IGBTs
75 A, 900 V, N-CHANNEL IGBT, TO-247AD
|
IXYS Corporation
|
| IXGH40N60 IXGH40N60A IXGM40N60A IXGM40N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSH30N60U1 IXSH30N60AU1 |
From old datasheet system
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGH10N100U1 IXGH10N100AU1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
